• DocumentCode
    2474544
  • Title

    New approach to elucidate the properties of carbon black-filled semiconducting materials for high voltage power cables

  • Author

    Miyashita, Y. ; Makishi, Y. ; Kato, H.

  • Author_Institution
    Mitsubishi Cable Ind., Ltd., Amagasaki, Hyogo, Japan
  • fYear
    1993
  • fDate
    17-20 Oct 1993
  • Firstpage
    678
  • Lastpage
    687
  • Abstract
    The authors have studied the basic electrical behavior of semiconducting materials employing a variety of CB (carbon black) loading amounts dispersed in several polyolefins. In the present work, the electrical conductivity of CB filled semiconducting materials is shown to depend on the nature of the CB network in the polymer matrix. The growth of the network may be accelerated by thermal vibration since higher molding temperature gives stable and enhanced conductivity. Both the amount of bound polymer and the dielectric breakdown strength seemed to predict the level of CB network development. Transmission electron microscope (TEM) observation of these semicon materials gave direct evidence for a well-grown CB network with high electrical conductivity
  • Keywords
    electric breakdown; electrical conductivity; filled polymers; organic semiconductors; polyethylene insulation; power cable insulation; transmission electron microscopy; C black-filled semiconducting materials; CB network development; TEM; basic electrical behavior; bound polymer; dielectric breakdown strength; electrical conductivity; high voltage power cables; molding temperature; polymer matrix; polyolefins; thermal vibration; Acceleration; Conducting materials; Dielectric breakdown; Dielectric materials; Organic materials; Polymers; Semiconductivity; Semiconductor materials; Temperature; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena, 1993. Annual Report., Conference on
  • Conference_Location
    Pocono Manor, PA
  • Print_ISBN
    0-7803-0966-9
  • Type

    conf

  • DOI
    10.1109/CEIDP.1993.378894
  • Filename
    378894