DocumentCode
2474572
Title
Inspection of critical dimension- and transmission uniformity of contact patterns by DUV imaging and regression algorithm
Author
Yamashita, K. ; Yamaguchi, S.
Author_Institution
Adv. LSI Technol. Lab., Toshiba R&D Center, Kawasaki, Japan
fYear
2000
fDate
11-13 July 2000
Firstpage
256
Lastpage
257
Abstract
The SIA roadmap requires that mask CD uniformity be 16 nm for isolated lines, 24 nm for dense lines and contact patterns of 0.18 micron generation. The purpose of this paper is to give a CD and transmission inspection algorithm based on regression, applications to contact patterns and statistical analysis of experimental results.
Keywords
inspection; statistical analysis; ultraviolet lithography; 0.18 micron; DUV lithography; contact pattern; critical dimension uniformity; inspection; regression algorithm; statistical analysis; transmission uniformity; Image sensors; Inspection; Isolation technology; Large scale integration; Linearity; Microelectronics; Pattern matching; Propagation losses; Research and development; Statistical analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872745
Filename
872745
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