• DocumentCode
    2474769
  • Title

    Status and potential for CMOS terminal PAs

  • Author

    Leenaerts, Domine ; Grillo, Giuseppe

  • Author_Institution
    Philips Res., Eindhoven, Netherlands
  • fYear
    2004
  • fDate
    19-22 Sept. 2004
  • Firstpage
    431
  • Lastpage
    434
  • Abstract
    In this overview, the status and potential for CMOS terminal RF power amplifiers (PAs) are discussed. The paper focuses on two application areas for RF PAs, namely wireless LAN/PAN applications, with output power levels up to 24 dBm, and cellular applications with power levels beyond 30 dBm.
  • Keywords
    CMOS analogue integrated circuits; MMIC power amplifiers; UHF power amplifiers; cellular radio; wireless LAN; CMOS terminal PA; RF power amplifiers; RFIC; cellular radio; wireless LAN; wireless PAN; Bluetooth; Breakdown voltage; CMOS technology; Degradation; Hot carriers; Impedance; Power amplifiers; Power generation; Radio frequency; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio and Wireless Conference, 2004 IEEE
  • Print_ISBN
    0-7803-8451-2
  • Type

    conf

  • DOI
    10.1109/RAWCON.2004.1389169
  • Filename
    1389169