DocumentCode
2474769
Title
Status and potential for CMOS terminal PAs
Author
Leenaerts, Domine ; Grillo, Giuseppe
Author_Institution
Philips Res., Eindhoven, Netherlands
fYear
2004
fDate
19-22 Sept. 2004
Firstpage
431
Lastpage
434
Abstract
In this overview, the status and potential for CMOS terminal RF power amplifiers (PAs) are discussed. The paper focuses on two application areas for RF PAs, namely wireless LAN/PAN applications, with output power levels up to 24 dBm, and cellular applications with power levels beyond 30 dBm.
Keywords
CMOS analogue integrated circuits; MMIC power amplifiers; UHF power amplifiers; cellular radio; wireless LAN; CMOS terminal PA; RF power amplifiers; RFIC; cellular radio; wireless LAN; wireless PAN; Bluetooth; Breakdown voltage; CMOS technology; Degradation; Hot carriers; Impedance; Power amplifiers; Power generation; Radio frequency; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Conference, 2004 IEEE
Print_ISBN
0-7803-8451-2
Type
conf
DOI
10.1109/RAWCON.2004.1389169
Filename
1389169
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