Title :
Reverse conduction properties of vertical SiC trench JFETs
Author :
Sheridan, David C. ; Chatty, Kiran ; Bondarenko, Vladomyr ; Casady, Jeffrey B.
Author_Institution :
SemiSouth Labs. Inc., Starkville, MS, USA
Abstract :
1200V SiC vertical trench JFETs have been evaluated for their reverse conduction properties. Absent of a traditional body diode, the SiC trench JFET is shown to be able to operate effectively in reverse mode when used with or without an antiparallel diode in applications requiring reverse commutation. Device characteristics and experimental results are given for both traditional half-bridge and cascode topologies.
Keywords :
junction gate field effect transistors; semiconductor diodes; silicon compounds; wide band gap semiconductors; SiC; antiparallel body diode; cascode topology; half-bridge topology; reverse commutation; reverse conduction property; vertical trench JFET; voltage 1200 V; JFETs; Logic gates; MOSFETs; Schottky diodes; Silicon carbide; Switches; SiC JFET; VJFET; reverse conduction; synchronous FET;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229102
