Title :
Electrical and optical properties of tantalum oxide thin films prepared by RF reactive sputtering
Author_Institution :
Shinshu Univ., Nagano, Japan
Abstract :
The author describes an investigation of the electrical and optical properties of sputtered tantalum oxide films with a view toward its possible use as a dielectric waveguide material. The tantalum oxide films used in the experiment were obtained by sputtering a tantalum target (99.94%) in an environment rich in oxygen (Ar/O2 = 84.5/15.5). The sputtered tantalum oxide films show high dielectric constant and low tan δ. However, their electrical resistivity and dielectric breakdown are lower than those of tantalum films anodized in an electrolyte. High refractive-index films were obtained
Keywords :
dielectric losses; dielectric thin films; dielectric waveguides; electric breakdown; electrical resistivity; permittivity; refractive index; sputtered coatings; tantalum compounds; RF reactive sputtering; Ta2O3; dielectric breakdown; dielectric waveguide material; electrical properties; electrical resistivity; high dielectric constant; optical properties; refractive-index; tan δ; thin films; Argon; Dielectric materials; Dielectric thin films; Electric resistance; High-K gate dielectrics; Optical films; Optical materials; Optical refraction; Optical waveguides; Sputtering;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1993. Annual Report., Conference on
Conference_Location :
Pocono Manor, PA
Print_ISBN :
0-7803-0966-9
DOI :
10.1109/CEIDP.1993.378951
