Numerical analysis of single photon avalanche photodiodes with improved structure

Author

Wang, W.J. ; Lin, L. ; Li, T.X. ; Li, N. ; Hu, W.D. ; Lu, W. ; Chen, X.S.

Author_Institution

Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China

fYear

2010

fDate

6-9 Sept. 2010

Firstpage

19

Lastpage

20

Abstract

In this paper, the effects of the thickness of the multiplication region (Tm), the sheet charge density of the charge control layer (Dc) and the guard ring design to a separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode (SPAD)´s performance are numerically discussed. Optimized Tm and Dc are designed for a SPAD. Implanted guard ring is revealed to be easier and better to suppress the junction edge electric field compared with the floating guard ring.

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor device models; InGaAs-InP; charge control layer; guard ring design; junction edge electric field; numerical analysis; sheet charge density; single photon avalanche photodiodes; Avalanche photodiodes; Electric fields; Indium gallium arsenide; Indium phosphide; Numerical models; Photonics; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on

Conference_Location

Atlanta, GA

ISSN

2158-3234

Print_ISBN

978-1-4244-7016-7

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2010.5595688

Filename

5595688