• DocumentCode
    2476097
  • Title

    Simulation for light power distribution of 3D InGaN/GaN MQW LED with textured surface

  • Author

    Cheng, Li-Wen ; Sheng, Yang ; Xia, Chang-Sheng ; Lu, Wei ; Lestrade, Michel ; Li, Zhan-Ming

  • Author_Institution
    Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
  • fYear
    2010
  • fDate
    6-9 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we introduce a full 3D simulation for light power distribution of an InGaN/GaN MQW LED with textured surface. Device simulation was performed by APSYS software to get power distribution of light source inside the LED. Based on this, ray tracing simulation was carried out to get light power distribution outside the LED. During the process of ray tracing, the textured surface was treated as a special boundary which means its reflectivity, transmittance and refraction angle are not calculated according to Fresnel equations, but obtained from data extracted from Finite-difference time-domain(FDTD) method. By comparing ray tracing result with and without textured surface, we found that textured surface not only smoothed transmitted power distribution, but also greatly improved power extraction efficiency which can be further improved by changing texture geometry.
  • Keywords
    Fresnel diffraction; III-V semiconductors; finite difference time-domain analysis; gallium compounds; indium compounds; light emitting diodes; light reflection; light refraction; light transmission; quantum well devices; ray tracing; surface texture; wide band gap semiconductors; 3D simulation; APSYS software; FDTD method; Fresnel equations; InGaN-GaN; MQW LED; finite-difference time-domain method; light power distribution; power extraction efficiency; ray tracing simulation; reflectivity; refraction angle; textured surface; transmittance angle; Gallium nitride; Light emitting diodes; Optical surface waves; Software; Surface texture; Surface waves; Three dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
  • Conference_Location
    Atlanta, GA
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4244-7016-7
  • Electronic_ISBN
    2158-3234
  • Type

    conf

  • DOI
    10.1109/NUSOD.2010.5595695
  • Filename
    5595695