DocumentCode :
2476489
Title :
Sub-nm order fluctuation control of narrowed pitch 2K-GxL™ device for high contrast
Author :
Ishikawa, Keita ; Saruta, Kunihiko ; Oniki, Kazunao ; Taguchi, Ayumu ; Yamaguchi, Masanari ; Yamashita, Keitaro ; Tamada, Hitoshi
Author_Institution :
Core Device Dev. Group, Sony Corp., Tokyo, Japan
fYear :
2009
fDate :
17-20 Aug. 2009
Firstpage :
45
Lastpage :
46
Abstract :
We developed a novel 2 K vertical resolution device, the 2K-GxL device, for a super real projector, which enabled ribbon pitch to be miniaturized and the contrast ratio to be high simultaneously. Shrinking the ribbon pitch from 4.25 mum from that of previous 1K-GxL device to 3.00 mum was done by introducing a tapered structure to the step region. A high device contrast ratio of 77000 was achieved by suppressing the fluctuation of ribbon height to under 0.32 nm by using the KrF lithography, and also developing a super flattened mirror.
Keywords :
lithography; micro-optomechanical devices; micromirrors; optical projectors; ges device contrast ratio; lithography; narrowed pitch 2K-GxL device; ribbon pitch; sub-nm order fluctuation control; super flattened mirror; super real projector; Costs; Diffraction; Displays; Fluctuations; Lithography; Mirrors; Optical devices; Reproducibility of results; Tensile stress; Transducers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical MEMS and Nanophotonics, 2009 IEEE/LEOS International Conference on
Conference_Location :
Clearwater, FL
Print_ISBN :
978-1-4244-2382-8
Electronic_ISBN :
978-1-4244-2382-8
Type :
conf
DOI :
10.1109/OMEMS.2009.5338603
Filename :
5338603
Link To Document :
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