P1H-1 LiNbO3-LiNbO3 High Overtone Bulk Acoustic Resonator Exhibiting High Q.f Product

Author

Gachon, D. ; Courjon, E. ; Masson, J. ; Petrini, V. ; Rauch, J.Y. ; Ballandras, S.

Author_Institution

UFC, Besancon

fYear

2007

fDate

28-31 Oct. 2007

Firstpage

1417

Lastpage

1420

Abstract

Bulk acoustic waves excited in thin piezoelectric films have revealed their capabilities for addressing the problem of high frequency RF filters and frequency sources (above 1 GHz). In this paper, we propose an alternative to thin film deposition consisting in single crystal wafers bonded on substrate (high quality) and thinned down, allowing for plate thickness close to 30mum. This has been achieved on 3 inches wafers and allows for an accurate selection of the wave characteristics. Harmonic bulk acoustic resonators have been built using this techniques, combining a thinned Y+36 LiNbO₃ plate and a Y+36 LiNbO₃ wafer. High quality resonances have been measured on an extended frequency range, allowing for QF products in excess of 8times10¹³ without any ambiguity.

Keywords

Q-factor; acoustic resonators; bulk acoustic wave devices; lithium compounds; piezoelectric devices; piezoelectric thin films; radiofrequency filters; ultrasonic devices; LiNbO₃; bulk acoustic waves excitation; frequency sources; harmonic BAW resonator; high frequency RF filters; high overtone BAW resonator; substrate bonded single crystal wafer; thin piezoelectric films; Acoustic measurements; Acoustic waves; Piezoelectric films; Power harmonic filters; Radio frequency; Resonance; Resonator filters; Sputtering; Substrates; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2007. IEEE

Conference_Location

New York, NY

ISSN

1051-0117

Print_ISBN

978-1-4244-1384-3

Electronic_ISBN

1051-0117

Type

conf

DOI

10.1109/ULTSYM.2007.356

Filename

4409929