Title :
Impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs
Author :
Hsu, S.S.H. ; Valizadeh, Pouya ; Pavlidis, D. ; Moon, J.S. ; Micovic, M. ; Wong, D. ; Hussain, T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs are reported. Reduced drain current ( /spl sim/ 67 mA/mm in the saturation region) and similar output power and power-added efficiency were found after RF stress. Transconductance dispersion is small before and after RF stress while output resistance dispersion reduces after RF stress. Tests performed under UV light suggest that the observed results may be attributed to trapping in the AlGaN/GaN HEMT layers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device reliability; AlGaN-GaN; AlGaN/GaN; HEMTs; RF stress; UV light; drain current; microwave characteristics; output power; output resistance dispersion; power characteristics; saturation region; transconductance dispersion; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Performance evaluation; Power generation; Radio frequency; Stress; Testing; Transconductance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049035
