DocumentCode
2477792
Title
Properties and design optimization of photo-diodes available in a current CMOS technology
Author
Zhang, WeiQuan ; Chan, Mansun
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
fYear
1998
fDate
29-29 Aug. 1998
Firstpage
22
Lastpage
25
Abstract
The properties of various photo-diodes available from a standard CMOS technology have been studied. These include light intensity dependent photo-current, turn-on and turn-off characteristics, diode capacitance, and design optimization for high responsivity. The MOSIS HP 0.8 μm CMOS technology has been selected to fabricate the test photo-diodes. Based on the results, the methodology to design optimal photo-diodes for low power CMOS imaging system will be discussed.
Keywords
CMOS image sensors; low-power electronics; photodiodes; 0.8 micron; CMOS technology; capacitance; design optimization; low power imaging system; photocurrent; photodiode; responsivity; turn-off; turn-on; CMOS image sensors; CMOS process; CMOS technology; Design methodology; Design optimization; Detectors; Diodes; Optical receivers; Optical sensors; Optoelectronic devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-4932-6
Type
conf
DOI
10.1109/HKEDM.1998.740180
Filename
740180
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