Title :
15-Gbit/s high-speed monolithically integrated pin-HEMT photoreceiver
Author :
Akatsu, Y. ; Miyamoto, Y. ; Akahori, Y. ; Ikeda, M.
Author_Institution :
NTT Transmission Syst. Labs., Yokosuka, Japan
Abstract :
In summary a high-speed monolithically integrated photoreceiver composed of a InGaAs pin PD and InAlAs-InGaAs HEMT´s (pin-HEMT) was constructed. Its sensitivity is -23.4 dBm in conjunction with an erbium-doped fiber pre-amplifier for a 15 Gbit/s NRZ lightwave signal. This is the first demonstration of the successful operation of a monolithically integrated photoreceiver at speeds beyond 10 Gbit/s
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; optical fibre communication; optical receivers; p-i-n photodiodes; sensitivity; 10 Gbit/s; 15 Gbit/s; InAlAs-InGaAs; InAlAs-InGaAs HEMT; InGaAs pin PD a; NRZ lightwave signal; erbium-doped fiber pre-amplifier; high-speed monolithically integrated pin-HEMT photoreceiver; monolithically integrated photoreceiver; sensitivity; Erbium-doped fiber amplifier; HEMTs; High speed optical techniques; MODFETs; Optical feedback; Optical modulation; Optical receivers; Optical sensors; Optical signal processing; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379063
