Title :
Modeling for the subthreshold current in SOI short channel gate controlled hybrid transistor
Author :
Huang, Ru ; Wang, Yangyuan ; Han, Ruqi
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
Abstract :
A subthreshold current model for the SOI short channel gate controlled hybrid transistor (GCHT) is presented in this paper for the first time, considering the mobile charge affected by the gate voltage and the base voltage simultaneously. The influence of the channel length and the drain voltage on the performance of GCHT is investigated. The model predictions agree well with numerical results and experimental data.
Keywords :
semiconductor device models; silicon-on-insulator; transistors; SOI short channel gate controlled hybrid transistor; model; subthreshold current; Charge carrier processes; Gaussian processes; MOSFET circuits; Microelectronics; Nonuniform electric fields; Poisson equations; Predictive models; Subthreshold current; Surface treatment; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740201
