Title :
Modeling of electromigration-induced resistance change in aluminum thin films
Author_Institution :
Dept. of Appl. Phys., Hong Kong Polytech., Kowloon, Hong Kong
Abstract :
The simulation of electromigration-induced resistance change in unpassivated pure aluminum films has been performed. It is suggested that the aggregation of the supersaturated vacancies forms voids. The latter develops into a continuous crack, which causes the resistance increase of the conductor. The simulated result is compared with experimental resistometric measurement.
Keywords :
aluminium; cracks; electric resistance; electromigration; metallic thin films; vacancies (crystal); voids (solid); Al; aluminum thin film; conductor; crack; electromigration; model; resistance; simulation; vacancy aggregation; void; Aluminum; Conductors; Electric resistance; Electromigration; Electrons; Equations; Geometry; Physics; Shape; Transistors;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740203
