Title :
Transport in one-dimensional semiconductor devices
Author :
Islam, S.K. ; Jain, F.C.
Author_Institution :
Dept. of Electr. Eng., North Florida Univ., Jacksonville, FL, USA
Abstract :
A novel quantum well wire (QWW) realized in a high electron mobility transistor structure is presented. The QWW structure is incorporated in the design of one-dimensional modulation-doped field-effect transistor (1-D MODFET) and one-dimensional quantum interference transistor (1-D QUIT) structures. Transport characteristics of the AlGaAs-GaAs 1-D MODFET and 1-D QUIT are presented and compared with two-dimensional devices. Our calculations show a significant improvement of the transconductance in one-dimensional transistors compared with their two-dimensional counterparts
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; one-dimensional conductivity; quantum interference devices; semiconductor quantum wires; 1D MODFET; 1D QUIT; AlGaAs-GaAs; high electron mobility transistor structure; one-dimensional quantum interference transistor; one-dimensional semiconductor devices; quantum well wire; transconductance; transport characteristics; two-dimensional devices; Carrier confinement; Electrons; Equations; Etching; Gallium arsenide; HEMTs; MODFETs; Semiconductor devices; Transconductance; Wire;
Conference_Titel :
Southcon/95. Conference Record
Conference_Location :
Fort Lauderdale, FL
Print_ISBN :
0-7803-2576-1
DOI :
10.1109/SOUTHC.1995.516080
