Title :
Development of Si IGBT Phase-Leg Modules for Operation at 200 °C in Hybrid Electric Vehicle Applications
Author :
Zhuxian Xu ; Dong Jiang ; Ming Li ; Puqi Ning ; Fei Wang ; Zhenxian Liang
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, Knoxville, TN, USA
Abstract :
A Si insulated-gate bipolar transistor (IGBT) phase-leg module is developed for operating at 200°C in hybrid electric vehicle applications utilizing the high temperature packaging technologies and appropriate thermal management. The static and switching electrical characteristics of the fabricated power module are tested at various temperatures, showing that the module can operate reliably with increased but acceptable losses at 200°C. The criterion on thermal performance is given to prevent thermal runaway caused by fast increase of the leakage current during a high temperature operation. Afterward, the thermal management system is designed to meet the criterion, the performance of which is evaluated with experiment. Furthermore, two temperature-sensitive electrical parameters, on-state voltage drop and the switching time, are employed for thermal impedance characterization and the junction temperature measurement during converter operation, respectively. Finally, a 10-kW buck converter prototype composed of the module assembly is built and operated at the junction temperature up to 200°C. The experimental results demonstrate the feasibility of operating Si device-based converters continuously at 200°C.
Keywords :
hybrid electric vehicles; insulated gate bipolar transistors; leakage currents; power convertors; silicon; thermal management (packaging); IGBT phase-leg modules; Si; buck converter prototype; high temperature operation; high temperature packaging technology; hybrid electric vehicle applications; junction temperature measurement; leakage currents; on-state voltage drop; power 10 kW; switching electrical characteristics; temperature 200 degC; temperature-sensitive electrical parameters; thermal management; Insulated gate bipolar transistors; Junctions; Leakage current; Multichip modules; Silicon; Temperature measurement; Temperature sensors; 200 °C; High temperature packaging; Si insulated-gate bipolar transistor (IGBT); hybrid electric vehicle (HEV); power module;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2013.2242096