Title :
Defect characterization in plastically deformed gallium arsenide
Author :
Leipner, H.S. ; Hübner, C. ; Storbeck, O. ; Polity, A. ; Krause-Rehberg, R.
Author_Institution :
Fachbereich Phys., Martin-Luther-Univ., Halle-Wittenberg, Germany
fDate :
29 Apr-3 May 1996
Abstract :
The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied
Keywords :
III-V semiconductors; annealing; gallium arsenide; plastic deformation; positron annihilation; tellurium; vacancies (crystal); GaAs:Te; antisites; defect spectrum; plastic deformation; positron lifetime; thermal annealing; vacancy clusters; Annealing; Argon; Atmosphere; Atmospheric measurements; Gallium arsenide; Infrared spectra; Positrons; Spectroscopy; Temperature measurement; Uniaxial strain;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571100
