A 3-MV Low-Jitter UV-Illumination Switch

Author

Junna Li ; Wei Jia ; Junping Tang ; Weiqing Chen ; Binjie Xue ; Aici Qiu

Author_Institution

Northwest Inst. of Nucl. Tech., Xi´an, China

Volume

41

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

360

Lastpage

364

Abstract

In a wide variety of high-power pulsed devices, the megavolt switch plays a key role in the system performance. A capacitance-resistance coupling structure was designed to produce UV light which triggered the switch to decrease the breakdown jitter. High-speed electrical measurements with a circuit integrating probe in the nanosecond range were employed to measure the voltage before the switch. From the experimental results, the breakdown characteristic of a 3-MV UV-illumination switch was obtained in the range of 1.6-2.5 MV: The jitter of the breakdown voltage is lower than 25 kV, and the jitter of the breakdown time is shorter than 5 ns.

Keywords

pulsed power switches; UV light; breakdown jitter; breakdown voltage; capacitance-resistance coupling; circuit integrating probe; high-power pulsed devices; high-speed electrical measurements; low-jitter UV-illumination switch; megavolt switch; voltage 1.6 MV to 2.5 MV; voltage 25 kV; voltage 3 MV; Breakdown voltage; Capacitance; Educational institutions; Electric breakdown; Jitter; Switches; Voltage measurement; Breakdown characteristics; UV illumination; jitter; pulsed power technology; pulsed switch;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2012.2237418

Filename

6418044