• DocumentCode
    2480911
  • Title

    Analyzing the optimal ratio of SRAM banks in hybrid caches

  • Author

    Valero, Alejandro ; Sahuquillo, Julio ; Petit, Salvador ; López, Pedro ; Duato, José

  • Author_Institution
    Dept. of Comput. Eng., Univ. Politec. de Valencia, Valencia, Spain
  • fYear
    2012
  • fDate
    Sept. 30 2012-Oct. 3 2012
  • Firstpage
    297
  • Lastpage
    302
  • Abstract
    Cache memories have been typically implemented with Static Random Access Memory (SRAM) technology. This technology presents a fast access time but high energy consumption and low density. As opposite, the recently appeared embedded Dynamic RAM (eDRAM) technology allows caches to be built with lower energy and area, although with a slower access time. The eDRAM technology provides important leakage and area savings, especially in huge Last-Level Caches (LLCs), which occupy almost half the silicon area in some recent microprocessors. This paper proposes a novel hybrid LLC, which combines SRAM and eDRAM banks to address the trade-off among performance, energy, and area. To this end, we explore the optimal percentage of SRAM and eDRAM banks that achieves the best target trade-off. Architectural mechanisms have been devised to keep the most likely accessed blocks in fast SRAM banks as well as to avoid unnecessary destructive reads. Experimental results show that, compared to a conventional SRAM LLC with the same storage capacity, performance degradation does not surpass, on average, 2.9% (even with 12.5% of banks built with SRAM technology), whereas area savings can be as high as 46% for a 1MB-16way LLC. For a 45nm technology node, the energy-delay squared product confirms that a hybrid cache is a better design than the conventional SRAM cache regardless the number of eDRAM banks, and also better than a conventional eDRAM cache when the number of SRAM banks is a quarter or an eighth of the cache banks.
  • Keywords
    SRAM chips; banking; cache storage; SRAM LLC; SRAM cache banks; SRAM technology; architectural mechanism; eDRAM banks; eDRAM technology; embedded dynamic RAM; hybrid LLC; hybrid cache memories; last level caches; optimal ratio; performance degradation; slower access time; static random access memory; storage capacity; Arrays; Art; Capacitors; Energy consumption; Program processors; Random access memory; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Design (ICCD), 2012 IEEE 30th International Conference on
  • Conference_Location
    Montreal, QC
  • ISSN
    1063-6404
  • Print_ISBN
    978-1-4673-3051-0
  • Type

    conf

  • DOI
    10.1109/ICCD.2012.6378655
  • Filename
    6378655