Electron emission and capture kinetics of a bistable medium-deep center in n-type bulk GaAs

Author

Shiraki, Hiroyuki ; Tokuda, Yutaka ; Sassa, Koichi

Author_Institution

Adv. Technol. Res. Labs., Mitsubishi Mater. Corp., Saitama, Japan

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

299

Lastpage

302

Abstract

The interaction between EL5 and EL6 was studied by using isothermal constant-capacitance voltage transient spectroscopy (CCVTS). Anomalous filling time dependence of CCVTS peak heights for two trap components of EL5 and EL6 was observed in a long range filling pulse duration. The decrement of one EL6 constituent was nearly equal to the increment of one EL5 constituent. This variation could be reversed by controlling electron occupation fractions of these traps. The calculation by rate equations based on a bistable reaction model could explain well such characteristic behaviors

Keywords

III-V semiconductors; capacitance; deep levels; electron traps; gallium arsenide; impurity states; CCVTS peak heights; EL5; EL6; GaAs; anomalous filling time dependence; bistable medium-deep center; bistable reaction model; electron capture kinetics; electron emission kinetics; electron occupation fractions; isothermal constant-capacitance voltage transient spectroscopy; long range filling pulse duration; n-type bulk GaAs; rate equations; trap components; Capacitance measurement; Charge carrier processes; Electron emission; Electron traps; Filling; Gallium arsenide; Isothermal processes; Kinetic theory; Pulse measurements; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571104

Filename

571104