Title :
4.55GHz phase and quadrature pulsed bias VCO in 40nm CMOS technology
Author :
Perticaroli, Stefano ; Neri, Filippo ; Palma, Fabrizio ; Balucani, Marco
Author_Institution :
Dept. of Inf. Eng., Electron. & Telecommun., Sapienza Univ. of Rome, Rome, Italy
Abstract :
Pulsed bias is an innovative technique introduced to improve the performance of oscillators in integrated circuits and is based on recent development of Floquet eigenvectors theory. Given the relatively low value of resonator quality factor achievable on-chip, for a specified bias voltage level, pulsed bias may result in a lower power consumption and in an improvement of the spectral purity of the oscillation. The main drawback of this approach is the need to introduce a certain time delay in order to properly position pulses with respect to oscillation waveform. Delay accumulation requires further energy dissipation and introduces additional jitter. In this paper we present a new architecture capable to avoid unnecessary delay, based on the idea to apply the pulsed bias approach to a quadrature oscillator.
Keywords :
CMOS integrated circuits; circuit oscillations; delay circuits; resonators; voltage-controlled oscillators; CMOS technology; Floquet eigenvectors theory; bias voltage level; delay accumulation; energy dissipation; frequency 4.55 GHz; innovative technique; integrated circuits; oscillation waveform; oscillators; power consumption; pulsed bias approach; quadrature oscillator; quadrature pulsed bias VCO; resonator quality factor; size 40 nm; spectral purity; time delay; unnecessary delay; Delay; Phase noise; Power demand; Transistors; Voltage-controlled oscillators; Floquet eigenvectors noise decomposition; Phase and quadrature VCO; pulsed bias oscillator;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2011 7th Conference on
Conference_Location :
Trento
Print_ISBN :
978-1-4244-9138-4
Electronic_ISBN :
978-1-4244-9136-0
DOI :
10.1109/PRIME.2011.5966280