Resonant tunneling injection lasers

Summary form only given. We report for the first time direct evidence for achieving population inversion via a resonant tunneling injection mechanism in a SCH-SQW device at 77 K. This phenomenon manifests itself in both the I-V, L-V, and L-I characteristics of the device. The I-V curves exhibit a negative differential resistance region similar to that of resonant tunneling diodes (RTDs). At the same critical field the L-V and L-I characteristics also show a substantial drop in the output power of the lasing mode, similar to the negative differential behavior of RTDs.