Polarization dependent electro-absorption in (In,Ga)As/GaAs strained multiple quantum well modulator grown on (110) GaAs

Author

Sun, D. ; Towe, E. ; Hayduk, M. ; Boncek, R.K.

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

504

Lastpage

505

Abstract

We have demonstrated what we believe to be the first anisotropic electro-absorption in a strained In_0.13Ga_0.87As/GaAs MQW modulator structure grown on vicinal (110) GaAs substrates. This novel effect could provide a useful characteristic for optical signal processing. The results reported here may lead to the design of a whole new class of polarization-sensitive light modulators

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; light polarisation; semiconductor quantum wells; (In,Ga)As/GaAs strained multiple quantum well modulator; In_0.13Ga_0.87As-GaAs; anisotropic electro-absorption; optical signal processing; polarization dependent electro-absorption; polarization-sensitive light modulators; vicinal [110] GaAs substrates; Absorption; Anisotropic magnetoresistance; Electrodes; Gallium arsenide; Geometrical optics; Optical buffering; Optical modulation; Optical polarization; Quantum well devices; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379282

Filename

379282