Title :
Synthesis of porous thermoelectric devices
Author :
Yasuda, Hideyuki ; Ohnaka, Itsuo ; Kaziura, Hideaki ; Yano, Tetsuya
Author_Institution :
Dept. of Adaptive Machine Syst., Osaka Univ., Japan
Abstract :
A number of studies have been performed in order to improve energy efficiency of thermoelectric materials and systems. The thermoelectric porous devices which utilize heat convection by gas flow through the porous device has been proposed to achieve high energy efficiency by Echigo et al. For the porous devices, porosity ratio and permeability of gas, which significantly affect convectional heat transfer in porous media, are important properties as well as thermoelectric properties. However, because many thermoelectric materials such as FeSi2, (Bi,Sb)2Te3 and PbTe are generally brittle, development of processing of porous thermoelectric devices has been hoped. A novel hot press method was able to form porous thermoelectric devices of the brittle FeSi2, (Bi,Sb)2Te3 and PbTe materials. In this method, open ratio was controlled up to 35% and permeability in order of 10-9 or 10-10 m2. Based on the processing, the functional-graded porous thermoelectric devices can be formed. Synthesis and optimization of the porous thermoelectric device including functionally graded device is discussed
Keywords :
brittleness; convection; porous materials; thermoelectric conversion; thermoelectric devices; (Bi,Sb)2Te3; FeSi2; PbTe; brittle materials; energy efficiency improvement; functional-graded porous thermoelectric devices; gas flow; gas permeability; heat convection; high energy efficiency; open ratio control; porosity ratio; porous thermoelectric devices synthesis; thermoelectric materials; thermoelectric properties; thermoelectric systems; Combustion; Cooling; Fluid flow; Heat transfer; Permeability; Power generation; Temperature; Thermal conductivity; Thermoelectric devices; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740428