All-optical inverted triode based on cross-gain modulation using InAs quantum dot semiconductor optical amplifiers

Author

Maeda, Yoshinobu ; Maki, Sayaka ; Kuroki, Yasuhiko ; Nakayama, Hideki ; Huh, Jae-Hoon

Author_Institution

Toyota Technol. Inst., Nagoya

fYear

2007

fDate

17-19 Oct. 2007

Firstpage

118

Lastpage

120

Abstract

We designed active layer of 15 stacks of InAs quantum dots, AIGaAs/GaAs double heterostructure and fabricated QD-SOAs for optical inverted triode. Our results demonstrate input, control and output waveforms, and input-output characteristics of the optical triode. It was obtained high speed response time at higher bit rate of 40 Gbps.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical communication equipment; optical fabrication; optical fibre communication; optical modulation; quantum dot lasers; semiconductor optical amplifiers; triodes; AlGaAs-GaAs; InAs; bit rate 40 Gbit/s; cross-gain modulation; double heterostructure; high speed response time; input-output characteristics; optical inverted triode; quantum dot semiconductor optical amplifiers; Bit rate; Delay; Gallium arsenide; High speed optical techniques; Optical control; Optical design; Optical modulation; Quantum dots; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication and Optoelectronics Conference, 2007 Asia

Conference_Location

Shanghai

Print_ISBN

978-0-9789217-2-9

Electronic_ISBN

978-0-9789217-2-9

Type

conf

DOI

10.1109/AOE.2007.4410723

Filename

4410723