A new deep submicron compact physical model for analog circuits

Author

Cho, Dae-Hyung ; Kang, S.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

fYear

1994

fDate

1-4 May 1994

Firstpage

41

Lastpage

44

Abstract

This paper presents a new deep submicron compact physical model for analog circuit simulation. The proposed model, iSIM, shows not only excellent moderate inversion characteristics for both DC and AC models but also the continuity of currents, conductances, and transcapacitances in all regions of operation. The model evaluation time of iSIM is only half of the SPICE level 2 model

Keywords

MOS integrated circuits; VLSI; circuit analysis computing; digital simulation; integrated circuit modelling; mixed analogue-digital integrated circuits; AC models; DC models; MOS transistors; VLSI; analog circuits; circuit simulation; conductance continuity; current continuity; deep submicron compact physical model; iSIM; mixed analog-digital chips; model evaluation time; moderate inversion characteristics; transcapacitances; Analog circuits; Analog-digital conversion; Circuit simulation; Doping; Function approximation; MOSFET circuits; Predictive models; SPICE; Semiconductor process modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1886-2

Type

conf

DOI

10.1109/CICC.1994.379770

Filename

379770