Electrical modeling and characterization of through silicon vias (TSV)

Through silicon via (TSV) is becoming a promising method to achieve high density 3-dimensional integrated circuit (3D IC) system. In this paper, the electrical modeling and characterization of TSVs is studied. An equivalent RLGC model of TSVs and the analytic equation of the lumped model parameter are introduced. The electrical characterization of TSVs is analyzed in frequency domain and time domain. For the frequency domain analysis, the S parameters from the RLGC model and 3D field solver are well matched, which demonstrates the validity of the proposed RLGC model. The effect of TSVs geometric parameters on signal transmission characteristic is also discussed. For the time domain analysis, the eye diagram simulation is performed to estimate electrical performance of TSVs channel.