Piezoelectrically Induced Polarization and Charge in InN-Based Heterostructures

Author

Hasan, Md Tanvir ; Islam, Md Fahimul ; Bhuiyan, Ashraful G. ; Islam, M.R. ; Yamamoto, A.

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol.

fYear

2006

fDate

19-21 Dec. 2006

Firstpage

245

Lastpage

248

Abstract

Theoretical analysis and calculation of polarization, piezoelectric field and sheet charge density of InN-based heterostructures have been studied as a function of lattice mismatch induced strain. Theoretical investigation shows that polarity of the grown structure plays substantial influence on charge density and electron confinement. A high sheet charge density and strong electron confinement at specific interfaces of the InN-based heterostructures are observed as a consequence of piezoelectric polarization and spontaneous polarization effects.

Keywords

indium compounds; piezoelectricity; polarisation; wide band gap semiconductors; InN; electron confinement; heterostructures; lattice mismatch induced strain; piezoelectric field; piezoelectric polarization; sheet charge density; spontaneous polarization effects; Capacitive sensors; Electrons; Gallium nitride; HEMTs; Lattices; Piezoelectric films; Piezoelectric materials; Piezoelectric polarization; Semiconductor films; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2006. ICECE '06. International Conference on

Conference_Location

Dhaka

Print_ISBN

98432-3814-1

Type

conf

DOI

10.1109/ICECE.2006.355336

Filename

4178454