• DocumentCode
    2490930
  • Title

    Analytical Study of Erbium-Doped Silicon Lasers

  • Author

    Hossain, M.Z. ; Huda, M.Q.

  • Author_Institution
    Dept. of EEE, Bangladesh Univ. of Eng. & Technol., Dhaka
  • fYear
    2006
  • fDate
    19-21 Dec. 2006
  • Firstpage
    249
  • Lastpage
    252
  • Abstract
    Operation of erbium doped silicon laser has been analytically studied. A quasi two level system has been considered. Spontaneous and stimulated processes involving the 4I13/2 - 4I15/2 erbium transitions have been analyzed. Threshold conditions of erbium excitation and the corresponding drive currents have been calculated. Optical output from laser and its dependence on system parameters like background doping, emission linewidth, etc. have been studied. For typical values of erbium doping and laser cavity dimensions, output power in milliwatt range with turn-on delay of the order of 500 ns has been estimated.
  • Keywords
    erbium; semiconductor doping; semiconductor lasers; silicon; 500 ns; 4I13/2; 4I15/2; Si:Er; drive currents; erbium doping; erbium excitation; erbium transitions; erbium-doped silicon lasers; laser cavity dimensions; quasitwo level system; Atom optics; DH-HEMTs; Doping; Erbium; High speed optical techniques; Laser theory; Laser transitions; Optical refraction; Silicon; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering, 2006. ICECE '06. International Conference on
  • Conference_Location
    Dhaka
  • Print_ISBN
    98432-3814-1
  • Type

    conf

  • DOI
    10.1109/ICECE.2006.355337
  • Filename
    4178455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2490930