DocumentCode
2490968
Title
Fabrication of Very-Deep Nanometer-Size Domain Inversion in LiNbO3 by Circular Form FCE
Author
Islam, M.S. ; Minakata, Makoto ; Nagano, Shigehiro ; Yoneyama, Satoshi ; Sugiyama, Tatsuhiko ; Awano, Haruyuki
Author_Institution
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka
fYear
2006
fDate
19-21 Dec. 2006
Firstpage
257
Lastpage
261
Abstract
Very-deep nanometer-size domain inversions in lithium niobate (LiNbO3) substrate have been realized using circular form full cover electrode (CF-FCE) for the first time. From the calculated results, circular form electrode is better than that of rectangular type for fine domain inversion patterns. Domain inversion was performed by applying high voltage to circular form FCE. Using the CF-FCE, the authors successfully fabricated 2 mum periodic domain inversion in a 500-mum-thick congruent LiNbO3 (C-LN) crystal. It is also shown that smaller domain inversion width in the nanometer regime with high aspect ratio is possible using this technique. The authors obtained an aspect ratio as high as 870 for a domain inversion width of 575 nm
Keywords
crystals; electrodes; lithium compounds; nanotechnology; niobium compounds; circular form full cover electrode; congruent lithium niobate crystal; domain inversion patterns; very-deep nanometer-size domain inversion; Electrodes; Erbium; Fabrication; Ferroelectric materials; Frequency conversion; Optical harmonic generation; Optical surface waves; Photonic band gap; Resists; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering, 2006. ICECE '06. International Conference on
Conference_Location
Dhaka
Print_ISBN
98432-3814-1
Type
conf
DOI
10.1109/ICECE.2006.355621
Filename
4178457
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