Title :
Sub-microsecond pulse switching characteristics of a 4500-V IEGT
Author :
Okamura, K. ; Nakajima, N. ; Souda, M. ; Endo, F. ; Matsuda, H. ; Kaneko, E.
Author_Institution :
Toshiba Corp., Tokyo, Japan
Abstract :
The short pulse (pulse width <=1 μs) switching characteristics of a newly developed semiconductor switch device, the 4500 V IEGT, have been investigated. Test results show that switching efficiency for pulse widths of 200 ns, 500 ns and 1000 ns were 65%, 80%, and 90%, respectively. Furthermore, the short recovery time of less than 20 μs showed that the IEGT is adequate for high repetition rate applications. It is concluded that the IEGT is one of the most promising devices for pulsed power uses
Keywords :
power bipolar transistors; power semiconductor switches; pulsed power switches; semiconductor device measurement; semiconductor device testing; 4500 V; IEGT semiconductor pulsed power switch; injection enhanced gate transistor; recovery time; repetition rate; short pulse switching characteristics; sub-μs pulse switching characteristics; switching efficiency; Circuit testing; Engineering profession; Insulated gate bipolar transistors; Space vector pulse width modulation; Switches; Switching circuits; Switching loss; Temperature; Thyristors; Voltage;
Conference_Titel :
Power Modulator Symposium, 1998. Conference Record of the 1998 Twenty-Third International
Conference_Location :
Rancho Mirage, CA
Print_ISBN :
0-7803-4244-5
DOI :
10.1109/MODSYM.1998.741208
