An Improved Physically Based Compact C-V Model for MOS Devices with High-K Gate Dielectrics

Author

Shams, M.I.B. ; Habib, K. M Masum ; Mikail, Rajib ; Khosru, Quazi Deen Mohd ; Zainuddin, A.N.M. ; Haque, A.

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka

fYear

2006

fDate

19-21 Dec. 2006

Firstpage

518

Lastpage

521

Abstract

An improved compact gate C-V model for MOS devices with high-k gate dielectrics is proposed. The model accurately includes the effect of wave function penetration into the gate dielectric. It is based on making lambda, the exponent of the Airy function solution of the eigenenergy, dependent on the characteristics of the dielectric material and on the substrate doping density. Comparison with experimental C-V data shows that the proposed model is more accurate than existing model which consider a constant value of lambda for all dielectric materials and doping densities

Keywords

MIS devices; dielectric materials; high-k dielectric thin films; semiconductor device models; wave functions; MOS devices; gate dielectric; high-k gate dielectrics; substrate doping density; wave function penetration; Capacitance-voltage characteristics; Dielectric materials; Dielectric substrates; Doping; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Semiconductor process modeling; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2006. ICECE '06. International Conference on

Conference_Location

Dhaka

Print_ISBN

98432-3814-1

Type

conf

DOI

10.1109/ICECE.2006.355682

Filename

4178518