Title :
Schottky diodes with the cutoff frequency of 2.6 THz and its applications in focal imaging array
Author :
Mou, Jin-Chao ; Xu, Ming-Ming ; Chen, Ling ; Wang, Zhi-Ming ; Yu, Wei-Hua ; Lv, Xin
Author_Institution :
Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China
Abstract :
This paper presents some critical techniques of the terahertz focal imaging system. As the key nonlinear devices in the focal plane array, the Schottky diodes with the cutoff frequency of 2.6 THz are designed and fabricated. Based on the Schottky diodes, the quasi-optical mixers are designed and realized using the GaAs Schottky diode process, which consists of the planar antennas on chip, the Schottky diodes and high resistivity lens. According to the Nyquist sampling theorem, a 220 GHz 1×6 focal plane array is designed and analyzed.
Keywords :
III-V semiconductors; Schottky diode mixers; focal planes; gallium arsenide; submillimetre wave diodes; submillimetre wave mixers; terahertz wave imaging; GaAs; Nyquist sampling theorem; Schottky diode process; cutoff frequency; focal imaging array; focal plane array; frequency 2.6 THz; frequency 220 THz; high resistivity lens; nonlinear devices; planar antennas; quasioptical mixers; terahertz focal imaging system; Arrays; Microwave imaging; Microwave theory and techniques; Mixers; Receivers; Schottky diodes;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6230112
