DocumentCode :
2492371
Title :
The influence of via hole inductance on millimetre-wave mixer performance
Author :
Brabetz, T. ; Fusco, V.F.
Author_Institution :
Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK
fYear :
2000
fDate :
2000
Firstpage :
40
Lastpage :
44
Abstract :
A novel method to eliminate the negative influence of the parasitic inductance of via holes on mixer performance is presented. The via hole inductance is resonated with an open stub for the millimetre-wave frequencies of the circuit. Detailed simulations of a pHEMT GaAs MMIC gate mixer predict a 2 dB higher conversion gain, and 4 dB reduction in LO power requirements for a circuit with resonated via holes in comparison to one with the classic form of via holes
Keywords :
HEMT integrated circuits; field effect MIMIC; inductance; millimetre wave mixers; resonance; EHF; GaAs; MM-wave mixer performance; PHEMT GaAs MIMIC gate mixer; millimetre-wave mixer performance; open stub; parasitic inductance; resonated via holes; via hole inductance; Circuit simulation; Gallium arsenide; HEMTs; Inductance; MMICs; PHEMTs; Parasitic capacitance; Performance gain; Predictive models; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Frequency Postgraduate Student Colloquium, 2000
Conference_Location :
Dublin
Print_ISBN :
0-7803-6590-9
Type :
conf
DOI :
10.1109/HFPSC.2000.874080
Filename :
874080
Link To Document :
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