160??120 Uncooled IRFPA for Small JR Camera

Author

Seto, Toshiki ; Kama, Keisuke ; Kimata, Masafumi ; Takeda, Munehisa ; Hata, Hisatoshi ; Nakaki, Yoshiyuki ; Inoue, Hiromoto ; Kosasayama, Yasuhiro ; Ohta, Yasuaki ; Fukumoto, Hiroshi

Author_Institution

Mitsubishi Electr. Corp. Kamakura, Kamakura

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

30

Lastpage

33

Abstract

We have developed a 160 times 120 SOI (silicon on insulator) diode uncooled IRFPA (Infrared Focal Plane Array) with 25 mum pixel pitch for a small IR camera. The IRFPA has a highly responsive pixel structure and is packaged in a chip scale vacuum package (CSVP) in order to reduce the package size. The size of the package is 14.5(L) times 13.5(W) times 1.2(H) mm. An infrared image of less than 60 mK in NETD (Noise Equivalent Temperature Difference) with f/1.0 optics has been obtained by the developed IRFPA.

Keywords

cameras; chip scale packaging; focal planes; infrared imaging; semiconductor diodes; silicon-on-insulator; SOI diode; chip scale vacuum package; infrared focal plane array; infrared image; noise equivalent temperature difference; silicon on insulator diode; small IR camera; uncooled IRFPA; Cameras; Chip scale packaging; Diodes; Electromagnetic wave absorption; Infrared sensors; Leg; Sensor arrays; Silicon on insulator technology; Temperature sensors; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2006. 5th IEEE Conference on

Conference_Location

Daegu

ISSN

1930-0395

Print_ISBN

1-4244-0375-8

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2007.355710

Filename

4178548