DocumentCode
2492762
Title
A generic modeling approach for molecule-gated nanowire transistors using VHDL-AMS
Author
Jalabert, Antoine ; Clermidy, Fabien ; Amara, Amara
Author_Institution
CEA-LETI, Grenoble
fYear
0
fDate
0-0 0
Firstpage
325
Lastpage
328
Abstract
A generic VHDL-AMS model for molecular-gated nanowire FET is presented. This compact modeling aimed at reproducing the specific electrical characteristics of this new class of devices, combining accuracy for circuits´ functional analysis with efficient simulation time. Three different devices have been successfully modeled and simulated. Comparison to experimental data shows very good accordance
Keywords
functional analysis; hardware description languages; insulated gate field effect transistors; nanoelectronics; nanowires; semiconductor device models; VHDL-AMS model; compact modeling; electrical characteristics; functional analysis; generic modeling; nanowire FET; nanowire transistors; Analytical models; Chemicals; Circuit simulation; Equations; FETs; Intrusion detection; MOSFET circuits; Nanoscale devices; Self-assembly; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Research in Microelectronics and Electronics 2006, Ph. D.
Conference_Location
Otranto
Print_ISBN
1-4244-0157-7
Type
conf
DOI
10.1109/RME.2006.1689962
Filename
1689962
Link To Document