Regular oscillation in two-section laser structures based on δ-doped superlattices

Author

Ushakov, D.V. ; Kononenko, V.K. ; Manak, I.S.

Author_Institution

Belarussian State Univ., Minsk, Russia

fYear

2000

fDate

2000

Firstpage

41

Lastpage

44

Abstract

It is theoretically shown that in two-section laser structures based on δ-doped superlattices a broadened spectral tuning is realised under special requirements for the parameters and excitation conditions in the gain and absorbing sections. The tuning occurs in the stationary operation, during transient process, and regular pulsation regime as well. In the GaAs δ-doped superlattice lasers, the tuning range covers of up to 60 nm in near infra-red

Keywords

III-V semiconductors; gallium arsenide; laser theory; laser tuning; semiconductor device models; semiconductor doping; semiconductor lasers; semiconductor superlattices; spectral line broadening; δ-doped superlattices; GaAs; GaAs δ-doped superlattice laser; IR tuning range; absorbing section; broadened spectral tuning; excitation conditions; gain section; regular oscillation; regular pulsation regime; stationary operation; transient process; two-section laser structure; two-section laser structures; Charge carrier processes; Doping profiles; Laser excitation; Laser modes; Laser tuning; Optical pulses; Oscillators; Photonic band gap; Radiative recombination; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2000 2nd International Conference on

Conference_Location

Gdansk

Print_ISBN

0-7803-6337-X

Type

conf

DOI

10.1109/ICTON.2000.874110

Filename

874110