Characterization of II-VI alloy semiconductor layers by photoreflectance spectroscopy and prism-coupler method

Author

Bala, Waclaw

Author_Institution

Inst. of Phys., Nicholas Copernicus, Torun, Poland

fYear

2000

fDate

2000

Firstpage

77

Abstract

Epitaxial films of Zn1-xMgxSe have been grown with thicknesses up to 2 micrometers on GaAs (100) oriented substrates at different temperatures by MBE method. The growth of a range of epitaxial zinc sulphoselenide alloys and the growth of zinc selenide on (111) zinc telluride crystals are also reported and the significance of such films for applications in integrated optics is discussed. The refractive indices are determined experimentally by photoreflectance spectroscopy and prism-coupler method as a function of their composition. The refractive index of thin film zinc selenide alloys, determined from the measured effective indices of guided modes excited by a prism coupler, is shown to be reproducible and close to values measured for bulk material

Keywords

II-VI semiconductors; epitaxial layers; magnesium compounds; optical couplers; optical films; optical prisms; photoreflectance; refractive index measurement; zinc compounds; (111) zinc telluride crystals; GaAs (100) oriented substrates; II-VI alloy semiconductor layers; MBE method; Zn1-xMgxSe; ZnMgSe; bulk material; epitaxial films; epitaxial zinc sulphoselenide alloy; guided modes; measured effective indices; photoreflectance spectroscopy; prism coupler; prism-coupler method; refractive index; refractive indices; thin film zinc selenide alloys; zinc selenide; Crystals; Gallium arsenide; Integrated optics; Molecular beam epitaxial growth; Optical films; Optical refraction; Semiconductor films; Substrates; Temperature; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2000 2nd International Conference on

Conference_Location

Gdansk

Print_ISBN

0-7803-6337-X

Type

conf

DOI

10.1109/ICTON.2000.874120

Filename

874120