DC Characterization of Highly Sensitive 1 by 128 NIR Photodetector Arrays with CMOS Readout IC

Author

Kim, Hoon ; Jo, Young Chang ; Song, Hong Joo ; Yoo, Dong Kyu ; Hong, Hyuck Ki ; Lim, Sin-Hwan ; Jung, Hwan Mok ; Choi, Pyong

Author_Institution

KETI, SeongNam

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

170

Lastpage

173

Abstract

Optical sensitivity improved InGaAs/InP heterojunction phototransistor (HPT) 1times128 one dimensional array chip and its CMOS readout IC have been designed and characterized for low light signal detection. We also present epitaxial structures and equivalent model to optimize the optical gain and shunt resistance characteristics. The device operation mechanism and experimental results are discussed. The experimental results show that our device has an optical sensitivity of 46 A/W. This high value of sensitivity originates from the optical gain-enhanced device structure. The proposed HPT also has hundreds of KOmega shunt resistance with high optical sensitivity under low illumination situation, which is enough for effective signal conversion through trans-impedance amplifier circuit.

Keywords

CMOS integrated circuits; III-V semiconductors; gallium arsenide; indium compounds; photodetectors; phototransistors; readout electronics; 1D array chip; CMOS readout integrated circuit; DC characterization; InGaAs-InP; NIR photodetector arrays; heterojunction phototransistor; one dimensional array chip; optical gain; optical sensitivity; shunt resistance; signal detection; transimpedance amplifier circuit; CMOS integrated circuits; Heterojunctions; Indium gallium arsenide; Indium phosphide; Optical arrays; Optical devices; Optical sensors; Photodetectors; Photonic integrated circuits; Phototransistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2006. 5th IEEE Conference on

Conference_Location

Daegu

ISSN

1930-0395

Print_ISBN

1-4244-0375-8

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2007.355746

Filename

4178584