Title :
Linearity measurements of Si/SiGe Heterojunction Bipolar Transistor using a Large Signal Network Analyzer with an harmonic Load-Pull setup
Author :
Blanchet, F. ; Pache, D. ; Giry, A. ; El Yaagoubi, M. ; Barataud, D. ; Nebus, J.M.
Author_Institution :
Central CAD, STMicroelectron.
Abstract :
This paper presents original multi-harmonic modulated load-pull measurements on a Si/SiGe HBT of STMicroelectronics technology. The original aspect is that the linearity, power and efficiency measurements are realized on an active load-pull test-bench associated with a large signal network analyzer. The aim of the measurements is to optimize and characterize the HBT excited by a CW and a two-tone signal. The comparison with the simulation lets to validate the models in large-signal
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; network analysers; semiconductor device measurement; Si-SiGe; harmonic load pull setup; heterojunction bipolar transistor; large signal network analyzer; linearity measurements; load pull measurements; Frequency; Germanium silicon alloys; Harmonic analysis; Heterojunction bipolar transistors; Linearity; Power measurement; Power transistors; Signal analysis; Silicon germanium; Testing;
Conference_Titel :
Research in Microelectronics and Electronics 2006, Ph. D.
Conference_Location :
Otranto
Print_ISBN :
1-4244-0157-7
DOI :
10.1109/RME.2006.1689997
