DocumentCode
2493555
Title
MMIC GaAs MESFET switch
Author
Barov, A.A. ; Ignatjev, M.G.
Author_Institution
Micran Co., Tomsk, Russia
fYear
2004
fDate
13-17 Sept. 2004
Firstpage
137
Lastpage
138
Abstract
MESFET based switching devices have considerable initial losses and smaller valid switched microwave frequency power compared with p-i-n based circuits. MESFET switches possess lower current drainage and technological possibility of integration into the chip. Presented in this paper are the results of the design of GaAs MMIC with DPDT structure based on MESFET.
Keywords
MESFET integrated circuits; field effect MMIC; field effect transistor switches; gallium arsenide; microwave switches; DPDT structure; GaAs; MESFET switches; MMIC switch; microwave frequency; Gallium arsenide; Helium; IEEE catalog; MESFET circuits; MMICs; Microwave circuits; Microwave frequencies; Switches; Switching circuits; Telecommunications;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN
966-7968-69-3
Type
conf
DOI
10.1109/CRMICO.2004.183134
Filename
1390116
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