Title :
MMIC GaAs MESFET switch
Author :
Barov, A.A. ; Ignatjev, M.G.
Author_Institution :
Micran Co., Tomsk, Russia
Abstract :
MESFET based switching devices have considerable initial losses and smaller valid switched microwave frequency power compared with p-i-n based circuits. MESFET switches possess lower current drainage and technological possibility of integration into the chip. Presented in this paper are the results of the design of GaAs MMIC with DPDT structure based on MESFET.
Keywords :
MESFET integrated circuits; field effect MMIC; field effect transistor switches; gallium arsenide; microwave switches; DPDT structure; GaAs; MESFET switches; MMIC switch; microwave frequency; Gallium arsenide; Helium; IEEE catalog; MESFET circuits; MMICs; Microwave circuits; Microwave frequencies; Switches; Switching circuits; Telecommunications;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183134
