Title :
The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs
Author :
Menozzi, R. ; Dieci, D. ; Sozzi, G. ; Tomasi, T. ; Lanzieri, C.
Author_Institution :
Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy
Abstract :
The gate-drain breakdown voltage (BVDG) ranks among the most significant figures of merit for microwave and millimeter-wave FETs, particularly high-power ones. Both an off-state and an on-state BV DG can be defined and measured, the former being more or less a diode property, while the latter is linked with impact ionization in the device channel. To be sure, since the breakdown voltage is typically defined fixing a certain threshold value for the gate reverse current, the indication it provides is valuable, but assuming a direct relationship between BVDG and the device reliability under high field conditions would be erroneous. This work speculates on the non-trivial correlation existing between the breakdown voltage and the device hot electron reliability and degradation, taking as a test vehicle power Al0.25Ga0.75As/GaAs HFETs with different gate lengths
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; impact ionisation; power field effect transistors; semiconductor device breakdown; semiconductor device reliability; Al0.25Ga0.75As-GaAs; AlGaAs/GaAs power HFET; figure of merit; gate scaling; gate-drain breakdown voltage; hot electron reliability; impact ionization; recess scaling; reverse current; Degradation; Diodes; Electric breakdown; Electrons; FETs; Impact ionization; Microwave devices; Millimeter wave measurements; Testing; Vehicles;
Conference_Titel :
GaAs Reliability Workshop, 1999. Proceedings
Conference_Location :
Monterey, CA
Print_ISBN :
0-7908-0100-0
DOI :
10.1109/GAASRW.1999.874153
