Reliability testing of 0.1 μm GaAs pseudomorphic HEMT MMIC amplifiers

Author

Leung, D.L. ; Chou, Y.C. ; Wu, C.S. ; Kono, R. ; Scarpulla, J. ; Lai, R. ; Hoppe, M. ; Streit, D.C.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1999

fDate

1999

Firstpage

87

Lastpage

88

Abstract

Reliability testing was completed on 0.1 μm gate length GaAs pseudomorphic HEMT MMICs. The circuit used for reliability testing is the ALH225C, a 2-stage Q band balanced amplifier. This MMIC was fabricated on both power and low noise substrate profiles. Both versions of the circuit were tested. The lifetests were conducted with accelerated DC bias and temperature conditions in order to attain failure in a reasonable length of time. Approximately 152 MMICs were used for step stress and lifetesting at 255, 270 and 285°C ambient temperature. Despite the aggressive bias used in this lifetest, the estimated lifetimes at 125°C for this process are high. The parameters extracted from this study for the high power MBE profile are MTF (125°C) of 6×10⁹ hours, with activation energy of 1.7 eV, and for the low noise MBE profile are MTF (125°C) of 7×10⁷ hours, with activation energy of 1.3 eV

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; differential amplifiers; field effect MMIC; gallium arsenide; integrated circuit reliability; integrated circuit testing; life testing; 0.1 micron; 125 C; 255 to 285 C; ALH225C; GaAs; GaAs pseudomorphic HEMT MMIC amplifier; Q-band balanced amplifier; activation energy; life testing; mean-time-to-failure; parameter extraction; reliability testing; step-stress testing; Acceleration; Circuit noise; Circuit testing; Gallium arsenide; Life estimation; Lifetime estimation; MMICs; PHEMTs; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1999. Proceedings

Conference_Location

Monterey, CA

Print_ISBN

0-7908-0100-0

Type

conf

DOI

10.1109/GAASRW.1999.874166

Filename

874166