High-speed InGaP/AlGaAs/InGaAs HBTs

Author

Kobayashi, S. ; Yakihara, T. ; Fujita, T. ; Oka, S. ; Miura, A.

Author_Institution

Teratec Corp., Yokogawa Electr. Corp., Musashino, Japan

fYear

1997

fDate

24-25 Nov 1997

Firstpage

39

Lastpage

42

Abstract

We have fabricated high-speed InGaP/AlGaAs/InGaAs graded-base hetero-bipolar transistors (HBTs), using Mg as the base-region p-type dopant. We have obtained maximum Mg doping concentration for GaAs of 1.2×10²⁰/cm³. In addition, the dead region under the base metal contact layer has been etched away. With the HBT´s emitter width as 1.0 um, we obtained excellent frequency characteristics of the short-circuit current-gain frequency f_t and the maximum frequency of oscillation f_max as high as approximately 130 GHz and 230 GHz, respectively. We obtained maximum toggle frequency of 22.5 GHz for a static frequency divider by using the 4-inch full process of the InGaP/AlGaAs/InGaAs graded-base HBT

Keywords

III-V semiconductors; MMIC frequency convertors; aluminium compounds; bipolar MMIC; emitter-coupled logic; frequency dividers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor doping; 1 mum; 130 GHz; 22.5 GHz; 230 GHz; 4 in; ECL ring oscillator; GaAs:Mg; HBT emitter width; InGaP-AlGaAs-InGaAs; InGaP/AlGaAs/InGaAs graded-base HBT; Mg doping concentration; base metal contact layer; base-region p-type dopant; dead region; frequency characteristics; high-speed InGaP/AlGaAs/InGaAs HBTs; maximum frequency of oscillation; maximum toggle frequency; short-circuit current-gain frequency; static frequency divider; Doping; Etching; Fabrication; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Parasitic capacitance; Prototypes; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668495

Filename

668495