Record Low-Power Organic RRAM With Sub-20-nA Reset Current

Author

Wenliang Bai ; Ru Huang ; Yimao Cai ; Yu Tang ; Xing Zhang ; Yangyuan Wang

Author_Institution

Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China

Volume

34

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

223

Lastpage

225

Abstract

In this letter, organic resistive random access memory (RRAM) devices based on double-layer polychloro-para-xylylene (parylene-C) are fabricated, which show stable bipolar resistive switching behavior, excellent data retention, and high scalability. Moreover, extremely low reset current of sub-20 nA and set current of 0.15 μA are obtained with adequate switching margin for the first time in the field of organic RRAM, almost 10⁵ times lower than that of the single-layer parylene-C cells, exhibiting great potentials for future low-power applications. Possible mechanism for the ultralow operating current of double-layer device is discussed.

Keywords

random-access storage; bipolar resistive switching behavior; current 0.15 muA; current 20 nA; double-layer polychloro-paraxylylene; excellent data retention; high scalability; organic resistive random access memory device; record low-power organic RRAM; reset current; single-layer parylene-C cells; Current measurement; Electrodes; Performance evaluation; Polymers; Resistance; Switches; Temperature measurement; Double layer; low power; organic resistive random access memory (RRAM); parylene-C; single layer;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2231047

Filename

6407719