ESD sensitivity study of various diode protection circuits implemented in a production 1 μm GaAs HBT technology

Author

Yamada, F.M. ; Oki, A.K. ; Kaneshiro, E.N. ; Lammert, M.D. ; Gutierrez-Aitken, A.L. ; Hyde, J.D.

Author_Institution

Electron. Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1999

fDate

1999

Firstpage

139

Lastpage

146

Abstract

Advanced GaAs Heterojunction Bipolar Transistors (HBTs) featuring smaller junction areas have an increased susceptibility to damage from Electrostatic Discharge (ESD) events and this is a topic of concern. In this paper, we examined the ESD sensitivity of various on-chip ESD-protection networks designed using base-collector (BC) junction diodes and Schottky diodes from a production 1 μm GaAs/AIGaAs HBT process. The purpose of this work was to measure and evaluate the ESD sensitivity of various protection networks and determine their effectiveness as protection devices

Keywords

III-V semiconductors; Schottky diodes; electrostatic discharge; gallium arsenide; heterojunction bipolar transistors; protection; semiconductor diodes; 1 micron; GaAs; GaAs heterojunction bipolar transistor; Schottky diode; base-collector junction diode; electrostatic discharge; protection circuit; Biological system modeling; Circuit testing; Electrostatic discharge; Gallium arsenide; Heterojunction bipolar transistors; Partial discharges; Production; Protection; Schottky diodes; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1999. Proceedings

Conference_Location

Monterey, CA

Print_ISBN

0-7908-0100-0

Type

conf

DOI

10.1109/GAASRW.1999.874179

Filename

874179