• DocumentCode
    2494931
  • Title

    On the fabrication of aluminum doped silica preform using MCVD and solution doping technique

  • Author

    Aljamimi, S.M. ; Anuar, M.S.K. ; Muhd-Yasin, S.Z. ; Zulkifli, M.I. ; Tamchek, N. ; Yusoff, Z. ; Abdul-Rashid, H.A.

  • Author_Institution
    Univ. Multi Media, Cyberjaya, Malaysia
  • fYear
    2012
  • fDate
    1-3 Oct. 2012
  • Firstpage
    235
  • Lastpage
    238
  • Abstract
    This paper provides detailed discussions on the fabrication of aluminum doped silica preform using solution doping technique and modified chemical vapor deposition (MCVD). The porous core layer was deposited at 1750°C with 30cm in deposition length. The soot formed at the inlet and outlet segment of the deposited length is analyzed using SEM for soot size and BET for pore size distribution. Refractive index profile of the doped preform is measured using preform analyzer. The refractive index difference obtained at the outlet and inlet segments shows uniform distribution of Al2O3, in agreement with the pore size distribution.
  • Keywords
    aluminium; chemical vapour deposition; impurity distribution; refractive index; scanning electron microscopy; silicon compounds; BET; MCVD; SEM; SiO2:Al; aluminum doped silica; modified chemical vapor deposition; pore size distribution; porous core layer; refractive index; size 30 cm; solution doping technique; temperature 1750 degC; Aluminum oxide; Doping; Fabrication; Optical fibers; Preforms; Refractive index; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics (ICP), 2012 IEEE 3rd International Conference on
  • Conference_Location
    Penang
  • Print_ISBN
    978-1-4673-1461-9
  • Type

    conf

  • DOI
    10.1109/ICP.2012.6379518
  • Filename
    6379518