Characteristics of AlGaN/GaN HEMTs With Various Field-Plate and Gate-to-Drain Extensions

Author

Hsien-Chin Chiu ; Chih-Wei Yang ; Hsiang-Chun Wang ; Fan-Hsiu Huang ; Hsuan-ling Kao ; Feng-Tso Chien

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

Volume

60

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

3877

Lastpage

3882

Abstract

AlGaN/GaN high-electron-mobility transistors (HEMTs) with various field-plate (FP) and gate-to-drain distance extensions are fabricated and investigated. Experiments are carried out on 20 transistors. Their ON-state resistance (RON), OFF-state breakdown voltage (VBR), RF performance, and low-frequency noise are measured and studied. The FP extension is found to significantly improve the OFF-state breakdown voltage. However, the FP extension obviously weakens the frequency response and power added efficiency performance, because it increases the feedback C_gd. The FP extension is beneficial to the reduction of the electric field intensity at the gate edge of the device and reduces the probability of the injection of electrons into traps, resulting in the reduction of low- frequency noise.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device breakdown; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; HEMT; OFF-state breakdown voltage; ON-state resistance; RF performance; electric field intensity reduction; electron injection; feedback; field plate; frequency response; gate-to-drain extensions; high-electron-mobility transistors; low-frequency noise; power added efficiency; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Low-frequency noise; MODFETs; Field plate; GaN; high-electron-mobility transistor; low-frequency noise;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2281911

Filename

6609049