DocumentCode
2496471
Title
CMOS RF device and circuit reliability
Author
Yuan, Jiann S.
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL, USA
fYear
2003
fDate
17-18 Nov. 2003
Firstpage
174
Lastpage
179
Abstract
The paper addresses CMOS device reliability such as hot carrier stress and gate oxide breakdown and their effects on RF circuit performance. Device experimental data and circuit simulation are presented. Methodology to design reliable RF circuits is also discussed.
Keywords
CMOS integrated circuits; circuit simulation; hot carriers; integrated circuit reliability; radiofrequency integrated circuits; CMOS RF device; RF circuit performance; RF circuits; circuit reliability; circuit simulation; design methodology; gate oxide breakdown; hot carrier stress; CMOS technology; Circuit optimization; Cutoff frequency; Degradation; Electric breakdown; Integrated circuit reliability; Interface states; MOSFET circuits; Radio frequency; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN
0-7803-7904-7
Type
conf
DOI
10.1109/EDMO.2003.1260034
Filename
1260034
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