DocumentCode
2497155
Title
A quantitative study of oxygen contamination in InGaAs grown by MBE
Author
Harmand, J.C. ; Juhel, M.
Author_Institution
France Telecom, Bagneux, France
fYear
1993
fDate
19-22 Apr 1993
Firstpage
711
Lastpage
714
Abstract
The contamination by oxygen in the molecular beam epitaxy of InGaAs was studied. The oxygen concentrations were measured by secondary ion mass spectroscopy in samples grown with interruptions. Quantitative estimations of O bulk concentrations were deduced with a very low detection limit. Correlations with growth conditions and electrical properties were observed
Keywords
III-V semiconductors; gallium arsenide; impurities; indium compounds; molecular beam epitaxial growth; oxygen; secondary ion mass spectra; semiconductor growth; InGaAs; MBE; O bulk concentrations; O contamination; electrical properties; growth conditions; quantitative study; secondary ion mass spectroscopy; Contamination; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Mass spectroscopy; Molecular beam epitaxial growth; Oxygen; Pollution measurement; Substrates; Telecommunications;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380545
Filename
380545
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